Annealing temperature and cocatalyst effects to the photoelectrochemical property of cuins2 thin film semiconductor

Abstract

Thin film of CuInS2 semiconductor had been synthesized by copper and indium stack electrodepositions on a molybdenum glass substrate and followed by sulfurization at varied annealing temperatures of 600-800 C. CuInS2 thin film was characterized by using XRD, Raman, and SEM. Then on the CuInS2 was deposited Pt with various deposition times and its photocurrent property was observed. Finally, Pt or Rh cocatalyst deposited on In2S3-CuInS2 was also measured its photoelectrochemical property. XRD, Raman, and SEM data showed CuInS2 had a different character with varied annealing temperatures. An annealing temperature of 680 C gave a maximum photocurrent of CuInS2 as a photocathode. The introduction of cocatalysts increased the photocurrent, even for Rh cocatalyst gave a better-applied bias photon-to-current efficiency than Pt.

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