# Band alignment of atomic layer deposited (HfZrO4)1-x(SiO2)x gate dielectrics on Si (100)
> Heo S.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_84946219401
Jurnal / Konferensi: Applied Physics Letters
Tahun terbit: 2015
DOI: https://doi.org/10.1063/1.4934567
ISSN: 00036951
Kuartil SJR: Q1
Citations: 27

## Authors
- Heo S.

## Abstract
The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO4 silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO2 increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO2 mole fraction, decreased the gate leakage current density. As a result, HfZrO4 silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.

## Keywords
- Band gap
- Semimetal
- Materials science
- Analytical Chemistry (journal)
- Atomic layer deposition
- X-ray photoelectron spectroscopy
- Annealing (glass)
- Direct and indirect band gaps
- Thin film
- High-κ dielectric
- Dielectric
- Gate dielectric
- Optoelectronics
- Chemistry
- Nuclear magnetic resonance
- Nanotechnology
- Electrical engineering
- Physics
- Chromatography
- Transistor
- Composite material
- Voltage
- Engineering

---
Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
Saat mengutip, gunakan DOI bila tersedia atau URL kanonis di atas.