Band alignment and optical properties of (ZrO2)0.66(HfO2)0.34 gate dielectrics thin films on p-Si (100)

Abstract

ZrO 2 ) 0.66 (HfO 2 ) 0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO 2 ) 0.66 (HfO 2 ) 0.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO 2 . In addition, the dielectric function (k, ), index of refraction n and the extinction coefficient k for the (ZrO 2 ) 0.66 (HfO 2 ) 0.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS- (k,)-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

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