# Giant magnetoresistance in FeMn/NiCoFe/Cu/NiCoFe spin valve prepared by opposed target magnetron sputtering
> Ramli

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_84904183895
Jurnal / Konferensi: Advanced Materials Research
Tahun terbit: 2014
DOI: https://doi.org/10.4028/www.scientific.net/AMR.979.85
ISSN: 10226680
Citations: 3

## Authors
- Ramli

## Abstract
The giant magnetoresistance (GMR) effect in FeMn/NiCoFe/Cu/NiCoFe spin valve prepared by dc opposed target magnetron sputtering is reported. The spin valve thin films are characterized by Scanning Electron Microscopy (SEM), Vibrating Sample Magnetometer (VSM) and magnetoresistance ratio measurements. All measurements are performed in room temperature. The inserted 45 mm thickness FeMn layer to the NiCoFe/Cu/NiCoFe system can increase the GMR ratio up to 32.5%. The coercive field to be increased is compared with different FeMn layer thickness. Furthermore, the coercive field ( Hc ) decreases with increasing FeMn layer thickness. Magnitude of coercive field is 0.1 T, 0.09 T and 0.08 T for FeMn layer thickness is 30 nm, 45 nm and 60 nm, respectively. The FeMn layer is used to lock the magnetization in the ferromagnetic layer through the exchange anisotropy. This paper will describe the development of a GMR spin valve and its magnetic properties.

## Keywords
- Coercivity
- Materials science
- Magnetoresistance
- Giant magnetoresistance
- Spin valve
- Sputter deposition
- Ferromagnetism
- Condensed matter physics
- Layer (electronics)
- Magnetometer
- Magnetization
- Sputtering
- Cavity magnetron
- Nuclear magnetic resonance
- Magnetic field
- Thin film
- Composite material
- Nanotechnology
- Physics
- Quantum mechanics

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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