# Effect of chlorine plasma treatment on electronic properties of GIZO thin film grown on SiO2/Si substrate
> Tahir D.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_84900314564
Jurnal / Konferensi: Journal of Mathematical and Fundamental Sciences
Tahun terbit: 2014
DOI: https://doi.org/10.5614/j.math.fund.sci.2013.45.3.1
ISSN: 23375760
Kuartil SJR: Q3
Citations: 1

## Authors
- Tahir D.

## Abstract
The effect of chlorine plasma treatment on electronic properties of GIZO grown on SiO 2 /Si by RF magnetron sputtering was investigated using Xray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), and secondary ion mass spectroscopy (SIMS). SIMS depth profiles indicated that the concentration of InO and ZnO on the surface was decreased after Cl 2 plasma treatment. REELS data showed that the band gap increased from 3.4 to 3.7 eV. XPS showed that Ind 5/2 and Zn2p 3/2 shifted to the higher binding energies by 0.5 eV and 0.3 eV, respectively. These phenomena were caused by oxygen deficiency and hydrocarbon contamination reduction as indicated by Cl atom bonding with In and Zn cations that are present on the surface after Cl 2 plasma treatment.

## Keywords
- X-ray photoelectron spectroscopy
- Analytical Chemistry (journal)
- Chlorine
- Substrate (aquarium)
- Silicon
- Sputtering
- Spectroscopy
- Binding energy
- Materials science
- Sputter deposition
- Electron spectroscopy
- Thin film
- Chemistry
- Atomic physics
- Nuclear magnetic resonance
- Nanotechnology
- Metallurgy
- Physics
- Geology
- Oceanography
- Quantum mechanics
- Chromatography

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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