Effect of chlorine plasma treatment on electronic properties of GIZO thin film grown on SiO2/Si substrate

Abstract

The effect of chlorine plasma treatment on electronic properties of GIZO grown on SiO 2 /Si by RF magnetron sputtering was investigated using Xray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), and secondary ion mass spectroscopy (SIMS). SIMS depth profiles indicated that the concentration of InO and ZnO on the surface was decreased after Cl 2 plasma treatment. REELS data showed that the band gap increased from 3.4 to 3.7 eV. XPS showed that Ind 5/2 and Zn2p 3/2 shifted to the higher binding energies by 0.5 eV and 0.3 eV, respectively. These phenomena were caused by oxygen deficiency and hydrocarbon contamination reduction as indicated by Cl atom bonding with In and Zn cations that are present on the surface after Cl 2 plasma treatment.

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