# Reflection electron energy loss spectroscopy for ultrathin gate oxide materials
> Shin H.C.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_84862810203
Jurnal / Konferensi: Surface and Interface Analysis
Tahun terbit: 2012
DOI: https://doi.org/10.1002/sia.3861
ISSN: 01422421
Kuartil SJR: Q3
Citations: 55

## Authors
- Shin H.C.

## Abstract
The band alignment of HfZrO 4 gate oxide thin films on Si (100) deposited by the atomic layer deposition method has been investigated using reflection electron energy loss spectroscopy and XPS. The band gap of HfZrO 4 gate oxide thin film is 5.40 ± 0.05 eV. The valence band offset (Δ E v ) and the conduction band offset (Δ E c ) are 2.50 ± 0.05 eV and 1.78 ± 0.05 eV, respectively. These values satisfy the minimum requirement for the hole and electron barrier heights of larger than 1 eV for device applications. We have demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO 4 thin films provides us a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials. Copyright © 2012 John Wiley & Sons, Ltd.

## Keywords
- Electron energy loss spectroscopy
- X-ray photoelectron spectroscopy
- Band gap
- Thin film
- Spectroscopy
- Oxide
- Atomic layer deposition
- Analytical Chemistry (journal)
- Materials science
- Gate oxide
- Electron
- Reflection (computer programming)
- Band offset
- Optoelectronics
- Chemistry
- Valence band
- Nanotechnology
- Physics
- Nuclear magnetic resonance
- Transistor
- Metallurgy
- Programming language
- Chromatography
- Computer science
- Transmission electron microscopy
- Voltage
- Quantum mechanics

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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