# Band alignment and optical properties of (ZrO 2) 0.66(HfO 2) 0.34 gate dielectrics thin films on p-Si (100)
> Tahir D.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_84859533934
Jurnal / Konferensi: Itb Journal of Science
Tahun terbit: 2011
DOI: https://doi.org/10.5614/itbj.sci.2011.43.3.5
ISSN: 19783043
Citations: 2

## Authors
- Tahir D.

## Abstract
ZrO 2 ) 0.66 (HfO 2 ) 0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO 2 ) 0.66 (HfO 2 ) 0.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO 2 . In addition, the dielectric function (k, ), index of refraction n and the extinction coefficient k for the (ZrO 2 ) 0.66 (HfO 2 ) 0.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS- (k,)-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

## Keywords
- Materials science
- Dielectric
- Thin film
- Optoelectronics
- Gate dielectric
- High-κ dielectric
- Nanotechnology
- Electrical engineering
- Transistor
- Engineering
- Voltage

---
Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
Saat mengutip, gunakan DOI bila tersedia atau URL kanonis di atas.