# Electronic and optical properties of La-aluminate dielectric thin films on Si (100)
> Tahir D.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_78449289486
Jurnal / Konferensi: Surface and Interface Analysis
Tahun terbit: 2010
DOI: https://doi.org/10.1002/sia.3590
ISSN: 01422421
Kuartil SJR: Q3
Citations: 24

## Authors
- Tahir D.

## Abstract
Abstract Electronic and optical properties of (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films grown on Si(100) by the atomic layer deposition method were studied by means of reflection electron energy loss spectroscopy (REELS). The dielectric function ε( k , ω), index of refraction ( n ) and the extinction coefficient ( k ) for (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films were obtained from a quantitative analysis of REELS data. The band gap of (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films increases from 5.75 to 6.35 eV as the Al 2 O 3 content (1 − x ) increases from 0.5 to 0.75 in the compound. The optical properties described in terms of n , k , and ε of (La 2 O 3 ) x (Al 2 O 3 ) 1− x were obtained from REELS spectra by using QUEELS‐ε( k , ω)‐REELS software. They show that the electronic and optical properties of (La 2 O 3 ) x (Al 2 O 3 ) 1− x thin films are dominated by La 2 O 3 even for high Al 2 O 3 concentrations. Copyright © 2010 John Wiley & Sons, Ltd.

## Keywords
- Thin film
- Analytical Chemistry (journal)
- Band gap
- Refractive index
- Dielectric function
- Dielectric
- Materials science
- Chemistry
- Mineralogy
- Nanotechnology
- Optoelectronics
- Chromatography

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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