Band alignment of atomic layer deposited (ZrO2)x(SiO 2)1-x gate dielectrics on Si(100)

Abstract

The band alignment for atomic layer deposited (ZrO2)x(SiO2)1-x (x = 1.0, 0.75, 0.5, 0.25) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, conduction band offset and the valence band offset for ZrO2 thin film were 5.30, 1.83, and 2.35 eV, respectively. These values for Zr silicates with x more than 0.5 are independent of SiO2 concentration, but both holes and electrons have more symmetric barrier heights when x = 0.25. The Zr silicate dielectrics are strongly affected by Zr-O nearest neighbor bonding.

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