# Two-color InGaAsGaAs quantum dot infrared photodetectors by selective area interdiffusion
> Fu L.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_47249087253
Jurnal / Konferensi: Applied Physics Letters
Tahun terbit: 2008
DOI: https://doi.org/10.1063/1.2955517
ISSN: 00036951
Kuartil SJR: Q1
Citations: 18

## Authors
- Fu L.

## Abstract
We report the postgrowth fabrication of two-color InGaAs∕GaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (TiO2) and performing rapid thermal annealing under the optimized condition, a blueshifted photoluminescence from the uncapped region was obtained compared with the TiO2 covered region. The corresponding device spectral photoresponse from the two adjacent regions exhibited a shift of 0.8μm around the wavelength of 6μm. This is a result of the simultaneous promotion and suppression of thermal interdiffusion during rapid thermal annealing.

## Keywords
- Photodetector
- Optoelectronics
- Materials science
- Infrared
- Photoluminescence
- Quantum dot
- Annealing (glass)
- Fabrication
- Gallium arsenide
- Wavelength
- Indium arsenide
- Quantum well
- Optics
- Physics
- Laser
- Alternative medicine
- Medicine
- Pathology
- Composite material

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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