Proton irradiation induced intermixing in InxGa 1-xAs/InP quantum wells

Abstract

We have investigated the quantum well interdiffusion of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x </sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> H/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with subsequent annealing at 750° for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted region of the structures. Initially, the energy shift increased with increasing dose, but then saturated at the highest doses. The energy shift was also found to decrease with increased implantation temperature. Time resolved photoluminescence was performed to investigate the carrier dynamic of the quantum wells after intermixing.

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