# On quantifying the group-V to group-III interdiffusion rate in in xGa1-xAs/InP quantum wells by differential reflectance
> Gareso P.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_33751328802
Jurnal / Konferensi: Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS
Tahun terbit: 2005
DOI: https://doi.org/10.1109/LEOS.2005.1548345
ISSN: 10928081
Citations: 0

## Authors
- Gareso P.

## Abstract
Differential reflectance (DR) measurements have been used to investigate the atomic intermixing of In/sub x/Ga/sub 1-x/As/InP quantum well structures using proton implantation. From DR spectra results we identified the heavy-hole and light-hole energy transitions, and from that the ratio of diffusion coefficient of group-V/group-III sublattices k=DV/DIII in lattice-matched (LM), tensile-strained (TS) and compressive-strained (CS) InGaAs QW were calculated. These values were 1.25, 1.05 and 1.40 for LM, TS and CS respectively.

## Keywords
- Quantum well
- Reflectivity
- Group (periodic table)
- Lattice (music)
- Diffusion
- Materials science
- Gallium arsenide
- Proton
- Ultimate tensile strength
- Chemistry
- Analytical Chemistry (journal)
- Condensed matter physics
- Physics
- Optics
- Metallurgy
- Optoelectronics
- Thermodynamics
- Quantum mechanics
- Laser
- Chromatography
- Organic chemistry
- Acoustics

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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