On quantifying the group-V to group-III interdiffusion rate in in xGa1-xAs/InP quantum wells by differential reflectance

Abstract

Differential reflectance (DR) measurements have been used to investigate the atomic intermixing of In/sub x/Ga/sub 1-x/As/InP quantum well structures using proton implantation. From DR spectra results we identified the heavy-hole and light-hole energy transitions, and from that the ratio of diffusion coefficient of group-V/group-III sublattices k=DV/DIII in lattice-matched (LM), tensile-strained (TS) and compressive-strained (CS) InGaAs QW were calculated. These values were 1.25, 1.05 and 1.40 for LM, TS and CS respectively.

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