# Proton irradiation-induced intermixing in InxGa 1-xAs/InP quantum wells - The effect of in composition
> Gareso P.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_33748869907
Jurnal / Konferensi: Semiconductor Science and Technology
Tahun terbit: 2006
DOI: https://doi.org/10.1088/0268-1242/21/10/013
ISSN: 02681242
Kuartil SJR: Q2
Citations: 7

## Authors
- Gareso P.

## Abstract
We have investigated atomic intermixing in InxGa 1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.

## Keywords
- Proton
- Irradiation
- Chemistry
- Composition (language)
- Materials science
- Radiochemistry
- Atomic physics
- Analytical Chemistry (journal)
- Physics
- Nuclear physics
- Philosophy
- Chromatography
- Linguistics

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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