# Suppression of thermal atomic interdiffusion in C-doped InGaAs/AlGaAs quantum well laser structures using TiO2 dielectric layers
> Gareso P.

URL kanonis: https://discover.unhas.ac.id/publications/pub_scopus_12844280015
Jurnal / Konferensi: Applied Physics Letters
Tahun terbit: 2004
DOI: https://doi.org/10.1063/1.1833563
ISSN: 00036951
Kuartil SJR: Q1
Citations: 16

## Authors
- Gareso P.

## Abstract
The effects of thermal annealing on C-doped InGaAs∕AlGaAs quantum well laser structures capped with titanium dioxide (TiO2) layers were investigated. The atomic interdiffusion was greatly suppressed by the presence of a TiO2 capping layer during annealing, inhibiting even the thermal intermixing observed in the uncapped sample. An increase in the amount of lattice contraction associated with the presence of substitutional carbon CAs after annealing without a capping layer was observed, but not after annealing with a TiO2 capping layer. Capacitance–voltage measurements confirmed the electrical activation of carbon after annealing without a dielectric layer and show a negligible change after annealing using a TiO2 capping layer. The possible mechanisms involving both the atomic intermixing on the group III sublattice and carbon activation on the group V sublattice and the implications for optoelectronic device integration using impurity-free intermixing are discussed.

## Keywords
- Annealing (glass)
- Materials science
- Dielectric
- Doping
- Quantum well
- Optoelectronics
- Impurity
- Titanium
- Analytical Chemistry (journal)
- Atomic layer deposition
- Laser
- Thin film
- Chemistry
- Nanotechnology
- Metallurgy
- Optics
- Physics
- Organic chemistry
- Chromatography

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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