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Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Gareso P.
Semiconductor Science and Technology
Q3Abstract
We have studied the influence of SiO 2 and TiO 2 dielectric layers on the atomic intermixing of In x Ga 1− x As/InP quantum well structures using the impurity-free vacancy disordering technique. Photoluminescence results revealed that an enhancement of interdiffusion was obtained when the samples were capped with SiO 2 . Although TiO 2 layers were able to suppress the interdiffusion in the InGaAs/InP system, the suppression was not significant compared to the AlGaAs/GaAs system. Based on a fitting procedure that was deconvoluted from the photoluminescence spectra as well as a theoretical modeling, the electron–heavy hole and electron–light hole transitions were identified, and a ratio of the group V to the group III diffusion coefficients ( k ) was obtained. The k ratio of the InGaAs/InP samples capped with SiO 2 is relatively larger than that of samples capped with TiO 2 layers.