# Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures
> Gareso P.

URL kanonis: https://discover.unhas.ac.id/publications/impurity-free-vacancy-disordering-ifvd-of-ingaasalgaas-quantum-well-laser-struct
Jurnal / Konferensi: Ecs Journal of Solid State Science and Technology
Tahun terbit: 2017
DOI: https://doi.org/10.1149/2.0251708jss
ISSN: 21628769
Kuartil SJR: Q3
Citations: 1

## Authors
- Gareso P.

## Abstract
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of InGaAs/InGaAs quantum well laser structures using double-crystal X-ray diffraction (DCXRD) and photoluminescence measurements. X-ray measurements showed that some part of the carbon was electrically activated after annealing without a dielectric capping layer, but not after annealing with a TiO2 capping layer. For a SiO2 capping layer, the tensile peak was still observed after annealing which is comparable to the samples annealed without capping layer. Photoluminescence results showed that a large energy shift was observed when the samples were coated with SiO2. A negligible photoluminescence shift was observed after annealing when the samples coated with TiO2.

## Keywords
- Photoluminescence
- Materials science
- Annealing (glass)
- Vacancy defect
- Impurity
- Quantum well
- Optoelectronics
- Dielectric
- Laser
- Analytical Chemistry (journal)
- Crystallography
- Optics
- Composite material
- Chemistry
- Physics
- Organic chemistry
- Chromatography

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Sumber: Discover Unhas — RIMS Universitas Hasanuddin.
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