Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures

Abstract

Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of InGaAs/InGaAs quantum well laser structures using double-crystal X-ray diffraction (DCXRD) and photoluminescence measurements. X-ray measurements showed that some part of the carbon was electrically activated after annealing without a dielectric capping layer, but not after annealing with a TiO2 capping layer. For a SiO2 capping layer, the tensile peak was still observed after annealing which is comparable to the samples annealed without capping layer. Photoluminescence results showed that a large energy shift was observed when the samples were coated with SiO2. A negligible photoluminescence shift was observed after annealing when the samples coated with TiO2.

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